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| 1 p x f s . 0 4 ' & 5 838 11 ( f o f s b m % f t d s j q u j p o ' f b u v s f t " q q m j d b u j p o t 1 j o $ p o g j h v s b u j p o 1 j o " t t j h o n f o u & r v j w b m f o u $ j s d v j u " c t p m v u f . b y j n v n 3 b u j o h t the xp161a11a1pr is an n-channel power mos fet with low on-state resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. a gate protect diode is built-in to prevent static damage. the small sot-89 package makes high density mounting possible. low on-state resistance : rds(on)=0.065 ? (vgs=10v) : rds(on)=0.105 ? (vgs=4.5v) ultra high-speed switching gate protect diode built-in operational voltage : 4.5v high density mounting : sot-89 notebook pcs cellular and portable phones on-board power supplies li-ion battery systems n-channel power mos fet dmos structure low on-state resistance: 0.105 ? (max) gate protect diode built-in ultra high-speed switching sot-89 package 4 0 5 5 0 1 7 * & 8 ( 4 % / $ i b o o f m . 0 4 ' & 5 e f w j d f c v j m u j o parameter drain-source voltage gate-source voltage drain current (dc) drain current (pulse) reverse drain current continuous channel power dissipation (note) channel temperature storage temperature vdss vgss id idp idr pd tch tstg 30 20 4 16 4 2 150 -55~150 v v a a a w ?c ?c symbol ratings units ta=25?c when implemented on a ceramic pcb note: pin number pin name function 1 3 2 g s d gate source drain 4 @ 9 1 " " 1 3 1 . ?? 9 1 " " 1 3 839 11 & m f d u s j d b m $ i b s b d u f s j t u j d t dc characteristics ta=25 : parameter units gate-source cut-off voltage vgs(off) 1.0 2.5 v 0.1050.075id=2a, vgs=4.5v ? gate-source leakage current igss a 10 forward transfer admittance (note) 5.5 s body drain diode forward voltage 0.85 1.1 v drain cut-off current idss 10 a vf vds=30v, vgs=0v id=1ma, vds=10v id=2a, vds=10v if=4a, vgs=0v vgs= 20v, vds=0v drain-source on-state resistance (note) rds(on) ? id=2a, vgs=10v 0.05 0.065 symbol conditions maxmin typ parameter units feedback capacitance crss pf output capacitance coss pf input capacitance ciss 55 150 270 pf vds=10v, vgs=0v f=1mhz symbol conditions maxmin typ dynamic characteristics ta=25 : effective during pulse test. note: yfs parameter units fall time tf ns rise time tr ns turn-on delay time td (on) 15 turn-off delay time td (off) ns 35 15 10ns vgs=5v, id=2a vdd=10v symbol conditions maxmin typ switching characteristics ta=25 : parameter units rth (ch-a) thermal resistance (channel-ambience) 62.5 : /w implement on a ceramic pcb symbol conditions maxmin typ thermal characteristics 4 @ 9 1 " " 1 3 1 . ?? 9 1 " " 1 3 840 11 5 z q j d b m 1 f s g p s n b o d f $ i b s b d u f s j t u j d t drain-source on-state resistance :rds (on) ( ? ) ambient temp.:topr ( : ) drain-source on-state resistance vs. ambient temperature pulse test " " 7 7 h t1 7 * e1 " " gate-source cut-off voltage variance :vgs (off) variance (v) ambient temp.:topr ( : ) gate-source cut-off voltage variance vs. ambient temperature vds=10v, id=1ma drain-source voltage:vds (v) drain current vs. drain-source voltage pulse test, ta=25 : 7 7 h t1 7 drain current:id (a) 7 7 7 7 7 drain current:id (a) gate-source voltage:vgs (v) drain current vs. gate-source voltage vds=10v, pulse test 5 b1 ? ? ? drain-source on-state resistance :rds (on) ( ? ) gate-source voltage:vgs (v) drain-source on-state resistance vs. gate-source voltage pulse test, ta=25 : * e1 " " drain-source on-state resistance :rds (on) ( ? ) drain current:id (a) drain-source on-state resistance vs. drain current pulse test, ta=25 : 7 h t1 7 7 4 @ 9 1 " " 1 3 1 . ?? 9 1 " " 1 3 841 11 7 e t 7 * e " 5 b ? 7 standardized transition thermal resistance vs. pulse width 1 v m t f 8 j e u i 1 8 t 4 u b o e b s e j [ f e 5 s b o t j u j p o 5 i f s n b m 3 f t j t u b o d f t u 4 j o h m f 1 v m t f ( b u f $ i b s h f 2 h o d 4 p v s d f % s b j o 7 p m u b h f 7 t e 7 ( b u f 4 p v s d f 7 p m u b h f 7 h t 7 3 f w f s t f % s b j o $ v s s f o u * e s " 3 u i d i b ? 8 * n q m f n f o u f e p o b d f s b n j d 1 $ # 5 b ? 1 v m t f 5 f t u gate-source voltage vs. gate charge reverse drain current vs. source-drain voltage 7 h t 7 7 $ b q b d j u b o d f $ q ' % s b j o 4 p v s d f 7 p m u b h f 7 e t 7 capacitance vs. drain-source voltage 7 h t1 7 g1 . ) [ 5 b1 ? $ j t t $ p t t $ s t t 4 x j u d i j o h 5 j n f u o t % s b j o $ v s s f o u * e " switching time vs. drain current 7 h t1 7 7 e e 7 1 81 t e v u z 5 b1 ? u g u s u e p g g u e p o 4 @ 9 1 " " 1 3 1 . ?? |
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